Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie (IISB)

• Workstation network reimbursementfor process simulation
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• CAD for test structure development
• Implantation laboratory with 5 ion accelerators from 5 keV to 6 MeV
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• Industry-compatible semiconductor laboratories with 1 300 m² clean room
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• Comprehensive instrumental analysis for gases, semiconductor wafers and liquid media
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• Cleanroom laboratories for instrument development and prequalification 150 mm to 300 mm
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• Comprehensive measurement equipment for power electronics (Zth measurement station, burst/surge tester, power harmonics analyzers, power measurement, thermography camera)
• EDA tools
• Therm. Simulation programs

Fraunhofer Institute for Integrated Circuits

In energy research: departments: Power Electronic Systems, Simulation and Technology Development

Working area: power devices, energy saving electronics, power electronic circuits and systems, solar cells

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Institute profile The Fraunhofer Institute for Integrated Circuits IIS, Division Device Technology, has the task to develop new semiconductor manufacturing devices and processes together with the industry and to provide simulation tools for the description of modern microelectronic manufacturing steps. As a competence center for power electronics, IIS-B also develops power electronic devices and systems - from single diodes to complete prototypes for switched-mode power supplies, frequency converters, and many more. Areas of work Technology simulation We develop powerful simulation programs for cost-effective and rapid technology and device development. In addition to program development, our work includes extensive experimental investigations to establish advanced physical models for process steps such as ion implantation, diffusion, oxidation, and layer deposition. We also provide support for the optimization of technological processes and devices by performing process, device and device simulations. Semiconductor manufacturing devices and materials We support companies in the development and improvement of new manufacturing devices, ma-terials and associated processes. Our scope of work includes device, component and material development, manufacturing process optimization and automation, device and material contamination studies, in situ/on-line measurement and control method development, and device prequalification. Technology development We are involved in the development of new process steps and procedures for VLSI and ULSI technology, the qualification of gases and chemicals using test processes, and the development of microsystem technology device structures. Our activities include surface and thin film technology, processes for thin dielectric films, high energy ion implantation, contamination and trace analysis as well as sensors and actuators. Power Electronic Systems Our field of work includes circuit and system development for all fields of power electronics with emphasis on industrial and automotive electronics. We support companies in application-oriented preliminary research as well as in the development of prototypes and small series. We are particularly interested in mechatronic system integration, i.e. the integration of power electronics, microelectronics, sensors and mechanics. Further topics are electrical and thermal system simulation and system optimization, innovative solutions for energy saving and efficiency optimization, power electronic measurement technology, component characterization and modeling. Crystal growth The Crystal Growth Department offers a wide range of research and development services based on its know-how in crystal growth and the many years of experience of its staff in plant engineering, measurement technology and computer simulation. This includes in particular the development and optimization of equipment and processes for the growth of crystals for microelectronics and microlithography. For this purpose, the department has user-friendly simulation programs which allow the calculation of the global heat and mass transfer in high-temperature plants with complex geometry. These programs are further developed in close cooperation with industrial users with respect to new or improved physical models, user-friendliness and more efficient numerical algorithms. Extensive experimental experience is also available in the development and application of measurement techniques for determining heat and mass transfer in crystal growing systems. In addition, numerous methods for the electrical and optical characterization of crystals are available due to the close cooperation with the Institute of Materials Science, Chair of Materials in Electrical Engineering.