Lehrstuhl für Elektronische Bauelemente der Friedrich-Alexander-Universität Erlangen-Nürnberg

For the development of quantum technologies in wide bandgap semiconductors, the generation of quantum systems (color centers) with optically spectrally stable properties plays a central role. Research at the LEB focuses on technology development and application-oriented characterization of such color centers in silicon carbide (SiC). Here, the LEB works closely with the Fraunhofer Institute for Integrated Systems and Device Technology IISB in Erlangen.

The Chair of Electronic Devices (LEB) is engaged in applied research in the fields of technology and manufacturing of electronic devices. The chair's research focuses on the development, characterization and simulation of new manufacturing processes and devices as well as on the development and optimization of equipment and materials for micro- and nanoelectronics.

Color center generation in SiC and diamond; development of quantum devices based on color centers in WBG semiconductor materials; low-temperature measurement of color center-based quantum devices; development of miniaturized quantum sensor systems for electronic and medical applications;

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Development and application of quantum repeaters based on SiC Development and application of quantum sensors based on SiC and diamond Development and application of quantum computers based on scalable qubits in SiC and diamond Analysis of color centers in SiC and diamond from 4K to RT.